inchange semiconductor isc product specification isc silicon npn power transistor 2SD1118 description c ollector-emitter breakdown voltage- : v (br)ceo = 50v(min) high dc current gain- : h fe = 300v(min.) @i c = 1a low collector saturation voltage high reliability applications switching regulators dc-dc converter solid sate relay general purpose power amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 15 v i c collector current-continuous 10 a i b b base current-continuous 3 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1118 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 50 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma; i c = 0 15 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.1a b 0.5 v v b e (sat) base-emitter saturation voltage i c = 2a; i b = 0.1a b 1.5 v i cbo collector cutoff current v cb = 80v; i e = 0 10 a i ebo emitter cutoff current v eb = 15v; i c = 0 100 a h fe dc current gain i c = 1a; v ce = 5v 300 switching times t on turn-on time 0.5 s t stg storage time 3.0 s t f fall time i c = 5a, i b1 = -i b2 = 0.5a; r l = 6 ; p w = 20 s; duty 2% 0.8 s isc website www.iscsemi.cn 2
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